Core Applications
Glovebox monitoring of perovskite crystallization.Thickness after spin-coat; defects after coating and encapsulation.In-line thickness & PL, real time defect checks, plus pre-shipment stability and electrical safety tests.
PV & New Energy
Interface Transport Layer
Buffer layers (NiOx, SnO₂, TiO₂, Coo): 10 nm - 100 nm, Carrier transport efficiency; thickness deviation impacts device performance
Light Absorption Layer
Silicon thin films (a-Si, uc-Si): 100 nm - 3 um, Controls spectral absorption across wavelength bands
Functional Layer
Perovskite wet / semi-dry / dry films: 10 nm - 1 um, Full-stack metrology for in-line monitoring and closed-loop feedback
Transparent Electrode
Transparent conductive oxides (FTO, ITO, IWO): 200 nm - 1 um, Affects transmittance and conductivity—key efficiency parameters
CdTe Solar Cells
Full stack: CdS window, CdTe absorber, back contact (e.g. ZnTe:Cu): 10 nm - 8 um, Full-stack thickness control impacts Voc and conversion efficiency; boosts process yield
CIGS Solar Cells
Full stack: Mo back contact, CIGS absorber, CdS buffer, ZnO:Al window: 30 nm - 2.5 um, Full-stack metrology—each layer thickness is critical for absorption, carrier transport and efficiency; enables closed-loop line control
Key Technology Selection
Non-contact interferometry delivers nanoscale thickness metrology without surface damage—enabling fast inspection.
Automated Measurement workflow
Multi-point auto-scan of the module surface; real-time data capture with auto calculation of thickness uniformity and average PL.
Process & Yield Gains
Real-time monitoring ensures that the film thickness and PL remain within the process range. It promptly provides feedback and adjusts the process parameters, effectively avoiding defects and significantly improving the overall yield of component manufacturing.
Application Case
In-line test view: film thickness and PL trends, with anomaly detection highlighted.
