Core Applications
Covers post-CMP roughness, film thickness uniformity, etch-depth analysis, and high-precision 3D critical dimensions for MEMS.
Semiconductor & Electronics
Photolithography
Photoresist: 100 nm - 10 um, Controls lithography pattern accuracy and impacts chip yield
Insulation / Passivation
Dielectric films (SiO₂, Si₃N₄): 10 nm - 1 um, Gate oxide layer, interlayer dielectric; determines electrical performance of devices
Flexible Circuit Protection
Polyimide (PI) / UV coating: 5 um - 50 um, FPC insulating protective layer; thickness affects flexibility and reliability
Key Technology Selection
Non-contact white-light interferometry enables nanoscale 3D topography without wafer damage—meeting strict semiconductor process needs.
Automated Measurement workflow
Multi-point auto-scan of the wafer; real-time capture with auto Sa/Sq roughness and film thickness uniformity (TTV) metrics.
Process & Yield Gains
Real-time control keeps Ra < 0.1 nm, feeds back process tweaks, suppresses defects, and significantly raises chip yield.
Application Case
Wafer surface inspection flow: silicon wafer, 3D topography scan, and key profile metrics—showing micro-morphology analysis.
